Enterprise AI Analysis
Adaptive learning strategies for addressing chamber variations in real-time endpoint detection of semiconductor plasma etching
Authors: Chae Sun Kim, Hae Rang Roh, Yongseok Lee, Yongsin Park, Chanmin Lee, Jong Min Lee
Abstract: As wafer open areas decrease and circuit designs become more intricate, the demand for precise endpoint detection (EPD) in etching processes has increased. However, variations among plasma chambers induce covariate shifts in data distributions, degrading the generalization capability of machine learning-based EPD models. To address this issue, we propose a contrastive entropy-conditioned chamber adaptation framework that enables robust EPD in new (target) chambers exhibiting distribution shifts from existing (source) chambers, even without labeled data from the target chamber, by leveraging adversarial learning. Our approach incorporates two additional strategies to enhance adaptation effectiveness. First, we introduce entropy conditioning that assigns larger weights to data samples exhibiting high transferability between the source and target chambers. Second, we employ contrastive learning to prevent target chamber feature representations from being overly biased toward the source domain, thereby preserving the intrinsic characteristics of the target chamber. Experiments were conducted using real optical emission spectroscopy data collected from multiple chambers, and various adaptation scenarios were considered based on different source chamber selection criteria to evaluate the robustness of the proposed method. Our results demonstrate that the proposed adaptation framework consistently yields improved EPD performance across all scenarios. Furthermore, scenario analysis reveals that selecting a source chamber with a data distribution similar to the target chamber enhances adaptation performance. To facilitate effective adaptation in practical manufacturing settings, we further propose a source chamber selection algorithm based on the Wasserstein distance. Ablation studies confirm that each component of the proposed framework contributes significantly to adaptation performance improvement.
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CECCA Framework for Robust EPD
| Method | Key Features | Performance (Relative) |
|---|---|---|
| CECCA (Proposed) |
|
Highest EPD R² (e.g., 0.775+ in Intra-Equip.) |
| ECCA (w/o Contrastive) |
|
Improved, but lower than CECCA |
| CA (w/o Entropy Cond.) |
|
Lower than ECCA |
| MMD (Moment Alignment) |
|
Slight improvement over ERM |
| ERM (No Adaptation) |
|
Lowest Performance |
Real-World Application: Overetch Time & CD Correlation
The study demonstrates the practical applicability of the proposed CECCA framework in real-world etching processes. By correlating the predicted overetch time with the measured hole Critical Dimension (CD), the model's performance is quantitatively validated. A strong linear regression (R² = 0.958) indicates that the CECCA model accurately predicts changes in CD due to overetching, making it a reliable tool for process control and quality assessment in semiconductor manufacturing. This method avoids labor-intensive destructive inspections for true endpoint labels.
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Implementation Roadmap
A phased approach to integrate CECCA into your semiconductor manufacturing pipeline.
Phase 1: Data Collection & Preprocessing
Gather OES data from source and target plasma chambers. Apply correlation-based wavelength selection and moving average filters.
Phase 2: Source Chamber Selection
Utilize Wasserstein distance to identify the source chamber with the highest similarity to the target chamber.
Phase 3: Model Training (CECCA)
Train the Transformer-based EPD model with entropy-conditioned adversarial learning and contrastive learning to achieve domain invariance and target-specific feature preservation.
Phase 4: Real-time EPD Deployment
Deploy the adapted EPD model for real-time endpoint detection on target chamber wafers, with a suggestion update algorithm for robustness.
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